＜一部編集中＞
藤井 克司
＜＜査読論文＞＞（トータル：77）
77Katsushi Fujii, Takenari Goto, Takafumi Yao
J. Appl. Phys. 115 (2014) 233510-1 - 8
Characteristics of Intermediate State Related to Anti-Stokes Luminescence of ZnO Single Crystals
76Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
Phys. Chem. Chem. Phys. 16 (2014) 15326-15330
A Nitride Based Polarization-Engineered Photocathode for Water Splitting without a p-type Semiconductor
75Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano Katsushi Fujii
Phys. Stat. Sol. (c) 11 (2014) 821-823
Surface Stability of n-type GaN Depending on Carrier Concentration and Electrolytes under Photoelectrochemical Reactions
74Dirk Ehrentraut, Gregory K.L. Goh, Katsushi Fujii, Chin Chun Ooi, Le Hong Quang, Tsuguo Fukuda, Masataka Kano, Yuantao Zhang, Takashi Matsuoka
J. Solid State Chem.214 (2014) 96-100
Homoepitaxy of ZnO and MgZnO Films at 90 ºC
73Katsushi Fujii, Shinichiro Nakamura, Masakazu Sugiyama, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nakano
Int. J. Hydrogen Energy 38 (2013) 14424-14432
Characteristics of Hydrogen Generation from Water Splitting by Polymer Electrolyte Electrochemical Cell Directly Connected with Concentrated Photovoltaic Cell
72Akihiro Nakamura, Masakazu Sugiyama, Katsushi Fujii, Yoshiaki Nakano
Jpn. J. Appl. Phys. 52 (2013) 08JN20
Comparison of Semiconductor–Electrolyte and Semiconductor–Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
71Hyojung Bae, Jaehyoung Park, Ki-Chang Jung, Akihiro Nakamura, Katsushi Fujii, Hyung-Jo Park, Tak Jeong, Hyo-Jong Lee, Young Boo Moon, Jun-Seok Ha
Jpn. J. Appl. Phys. 52 (2013) 08JN26
The Polarity Effect on the Photoelectrochemical Properties of Ga- and N-Face Free-Standing GaN Substrate
70Kazehiko Anazawa, Sodabanlu Hassanet, Katsushi Fujii, Yoshiaki Nakano, Msakazu Sugiyama
J. Cryst. Growth, 370 (2013) 82-86
Growth of Strain-Compensated InGaN/AlN MQWs on GaN by MOVPE
69Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga, Katushi Fujii, Takafumi Yao, Nobuaki Yamamoto
Physica B: Condensed Mater 407(2012) 2886-2888
Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures
68Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga, Katushi Fujii, Takafumi Yao
J. Appl. Phys. 111 (2012) 113514-1 – 113514-6
Optical properties of edge dislocations on ( 1 1 ¯ 00 ) prismatic planes in wurtzite ZnO introduced at elevated temperatures
67Katsushi Fujii, Takenari Goto, Takafumi Yao
Phys. Stat. Sol. (a) 209 (2012) 761-765
Properties of Ultraviolet Anti-Stokes Photoluminescence in ZnO Single Crystals
66Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh, Takafumi Yao
Phys. Stat. Sol. (c) 9 (2012) 715-718
Photoluminescence Changes in n-type GaN Samples after Photoelectrochemical Treatment
65Dirk Ehrentraut, Katsushi Fujii, Jürgen Riegler, K. Byrappa, Martin Nikl, Tsuguo Fukuda
Progress in Crystal Growth and Characterization of Materials 58 (2012) 51–59
Functional One, Two, and Three-dimensional ZnO Structures by Solvothermal Processing
64Dirk Ehrentraut, KatsumiMaeda, MasatakaKano, KatsushiFujii, TsuguoFukuda
J. Cryst. Growth, 320 (2011) 18-22
Next-Generation Hydrothermal ZnO Crystals
63Katsushi Fujii, Shinichiro Nakamura, Satoshi Yokojima, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano
J. Phys. Chem. C 115 (2011) 25165-25169
Photoelectrochemical Properties of InxGa1-xN/GaN Multiquantum Well Structures in Depletion Layers
62Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh, Takafumi Yao
Phys. Stat. Sol. (c) 8 (2011) 2457-2459
Time Dependence of Water-Reducing Photocurrent with Change of the Characteristics of n-type GaN Photo-Illuminated Working Electrodes
61Hyun-Jae Lee, Katsushi Fujii, Takenari Goto, Takafumi Yao, Ji-Ho Chang
Appl. Phys. Lett. 98 (2011) 071904-1 – 071904-3
Effects of Controlled Ambidirectional Nucleation on the Heteroepitaxial Growth of m-GaN on m-Sapphire
60Hiroyuki Shibata, Hiromichi Ohta, Takashi Nemoto, Shun Nagayama, Yoshio Waseda, Katsushi Fujii, K. Thomas Jacob
High Temperature Materials and Processes 29 (2010) 515-522
Measurement for Thermal Effusivity ofAlxGa1-xN Alloys Using Thermoreflectance with Periodic Heating
59Katsushi Fujii, Masato Ono, Yasuhiro Iwaki, Keiichi Sato, Kazuhiro Ohkawa, Takafumi Yao
J. Phys. Chem.C 114 (2010) 22727-22735
Photoelectrochemical Properties of the p-n Junction in and near the Surface Depletion
Region of n-Type GaN
58Kayo Koike, Keiichi Sato, Katsushi Fujii, Takenari Goto, Takafumi Yao
Phys. Stat. Sol. (c) 7 (2010) 2221-2223
Time Variation of GaN Photoelectrochemical Reactions Affected by Light Intensity and Applied Bias
57Katsushi Fujii,Takashi Kato, Keiichi Sato, Inho Im, Jiho Chang, Takafumi Yao
Phys. Stat. Sol. (c) 7 (2010) 2218-2220
Photoelectrochemical Application of GaN Nanostructures on Si for Hydrogen Generation by Water Reduction
56Mina Jung, Jiho Chang, Hyunjae Lee, Jun-seok Ha, Jin-sub Park, Seungwhan Park, Katsushi Fujii, Takafumi Yao, Gyung-suk Kil, Seogwoo Lee, Myungwhan Cho, Sungmin Whang, Yong-gon Seo
J. Vac. Sci. Tech. B 28 (2010) 623-626
Correlation between Structural and Optical Properties of a-plane GaN Films Grown on r-plane Sapphire by Metal Organic Chemical-Vapor Deposition
55Si-Young Kim, Hyun-Jae Lee, Seung-Hwan Park, Woong Lee, Mi-Na Jung, Katsushi Fujii, Takenari Goto, Takashi Sekiguchi, Jiho Chang, Gyungsuk Kil, Takafumi Yao
J. Cryst. Growth 312 (2010) 2150-2153
Fabrication of a Freestanding GaN Layer by Direct Growth on a ZnO Template using Hydride Vapor Phase Epitaxy
54Seogwoo Lee, Jun-Seok Ha, Hyun-Jae Lee, Hyo-Jong Lee, Hideki Goto, Takashi Hanada, Takenari Goto, Katsushi Fujii, Meoun-Whan Cho Takafumi Yao
J. Phys. D : Appl. Phys. 43 (2010) 175101-1 – 175101-5
An Empirical Equation Including the Strain Effect for Optical Transition Energy of Strained and Fully Relaxed GaN Films
53Youngji Cho, Jun-Seok Ha, Mina Jung, Hyun-Jae Lee, Seunghwan Park, Jinsub Park, Katsushi Fujii, Ryuichi Toba, Samnyung Yi, Kyungsuk Gil, Jiho Chang, Takafumi Yao
J. Cryst. Growth 312 (2010) 1693-1696
The Impact of an Intermediate Temperature Buffer on the Growth of GaN on an AlN Template by Hydride Vapor Phase Epitaxy
52Katsushi Fujii, Takashi Kato, Tsutomu Minegishi, Takahiro Yamada, Hisanori Yamane, Takafumi Yao
Electrochemistry 78 (2010) 136-139
Photoelectrochemical Properties of Single Crystalline and Polycrystalline GaN Grown by the Na-flux Method
51Hyun-Jae Lee, Takenari Goto, Katsushi Fujii, Takafumi Yao, Chin-Kyo Kim, Ji-Ho Chang
J. Cryst. Growth 312 (2010) 198-201
Novel Approach to the Fabrication of a Strain- and Crack-Free GaN Freestanding Template: Self-Separation Assisted by the Voids Spontaneously Formed During the Transition in the Preferred Orientation
50Inho Im, Mina Jung, Jieun Koo, Hyunjae Lee, Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Katsushi Fujii, Takafumi Yao, Gyungsuk Kil, Takashi Hanada, Jiho Chang
J. Vac. Sci. Tech. A 28 (2010) 61-64
Effect of Anion-to-Cation Supplying Ratio on the Surface Morphology of AlN Films Grown on ZnO Substrates at Low Temperature
49Ji-Ho Chang, Mi-Na Jung, Jin-Sub Park, Seung-Hwan Park, In-Ho Im, Hyun-Jae Lee, Jun-Seok Ha, Katsushi Fujii, Takashi Hanada, Takafumi Yao, Y. Murakami, N. Ohtsu, G.S. Kil
Appl. Surf. Sci. 255 (2009) 8582-8586
X-ray Photoelectron Spectroscopy Study on the CrN Surface Grown on Sapphire Substrate to Control the Polarity of ZnO by Plasma-assisted Molecular Beam Epitaxy
48Katsushi Fujii, Seogwoo Lee, Jun-Seok Ha, Hyun-Jae Lee, Hyo-Jong Lee, Sang-Hyun Lee, Takashi Kato, Meoung-Whan Cho, Takafumi Yao
Appl. Phys. Lett. 94 (2009) 242108-1 – 242108-3
Leakage Current Improvement of Nitride-based Light Emitting Diodes using CrN Buffer Layer and its Vertical Type Application by Chemical Lift-off Process
47Keiichi Sato, Katsushi Fujii, Kayo Koike, Takenari Goto, Takafumi Yao
Phys. Stat. Sol. (c) 6 (2009) S635-S638
Anomalous Time Variation of Photocurrent in GaN During Photoelectrochemical Reaction for H2 Gas Generation in NaOH Aqueous Solution
46Katsushi Fujii, Keiichi Sato, Takashi Kato, Kayo Koike, Takafumi Yao
Phys. Stat. Sol. (c) 6 (2009) S627-S630
Surface Changes by GaN Photoelectrochemical Treatment using Various Electrolytes with and without C2H5OH
45Hyun-Jae Lee, Jun-Seok Ha, Hyo-Jong Lee, Seogwoo Lee, Katsushi Fujii, S. K. Hong, Ji- Ho Chang, MeoungWhan Cho, Takenari Goto, Takafumi Yao
Phys. Stat. Sol. (c) 6 (2009) S313-S316
Fabrication of Free-Standing GaN Substrate Using Evaporable Buffer Layer (EBL)
44Seogwoo Lee, Jun-Seok Ha, Hyun-Jae Lee, Hyo-Jong, Hiroki Goto, Takashi Hanada, Takenari Goto, Katsushi Fujii, Meoung-Whan Cho, Takafumi Yao
Appl. Phys. Lett. 94 (2009) 082105-1 – 082105-3
Lattice Strain in Bulk GaN Epilayers Grown on CrN/Sapphire Template
43Yutaka Ohno, Haruhiko Koizumi, Toshinori Taishi, Ichiro Yonenaga, Katushi Fujii, Hiroki Goto, Takafumi Yao
J. Appl. Phys. 104 (2008) 073515-1 – 073515-6
Optical Properties of Dislocations in Wurtzite ZnO Single-Crystals Introduced at Elevated Temperatures
42Dirk Ehrentraut, Miyuki Miyamoto, Hideto Sato, Jugen Riegler, K. Byrappa, Katsushi Fujii, Katsuhiko Inaba, Tsuguo Fukuda, Tadafumi Adschiri
Cryst. Growth Design 8 (2008) 2814-2820
Simple Processing of ZnO from Solution: Homoepitaxial Film and Bulk Single Crystal
41Sang-Hyun Lee, Tsutomu Minegishi, Katsushi Fujii, Takafumi Yao <Invited Paper>
J. Korean. Phys. Soc. 53 (2008) 406-411
ZnO Nanorods and Periodically-Polarity Inverted Structures for Photonic Devices
40Tsutomu Minegishi, A. Ishizawa, J. Kim, D. Kim, S. Ahn, Seung-Hwan Park, Jin-Sub Park, In-Ho Im, D. C. Oh, H. Nakano, Katsushi Fujii, H. Jeon, Takafumi Yao
J. Vac. Sci. Tech. B 26 (2008) 1120-1123
Fabrication of periodically polarity-inverted ZnO films
39Yasuhiro Iwaki, Masato Ono, Kazuki Yamaguchi, Kazuhide Kusakabe, Katsushi Fujii, Kazuhiro Ohkawa
Phys. Stat. Sol. (c) 5 (2008) 2349-2351
Nitride Photocatalyst to Generate Hydrogen Gas from Water
38Katsushi Fujii, Hitoshi Nakayama, Keiichi Sato, Takashi Kato, Meoung-Whan Cho, Takafumi Yao
Phys. Stat. Sol. (c) 5 (2008) 2333-2335
Improvement of Hydrogen Generation Efficiency using GaN Photoelectrochemical Reaction in Electrolytes with Alcohol
37Dirk Ehrentraut, Yuji Kagamitani, Akira Yoshikawa, Naruhiro Hoshino, Hirohisa Itoh, Shin-ichiro Kawabata, Katsushi Fujii, Takafumi Yao, Tsuguo Fukuda
J. Mater. Sci. 43 (2008) 2270-2275
Ammonothermal Synthesis of Thick Gallium Nitride Film Employing Acidic Mineralizers
36Hyun-Jae Lee, Seogwoo Lee, Hiroki Goto, Hyo-Jong Lee, Jun-Suk Ha, Katsushi Fujii, Meoung-Whan Cho, Takafumi Yao, Soon-Ku Hong
J. Cryst. Growth 310 (2008) 920-923
The Roles of Low-Temperature Buffer Layer for Thick GaN Growth on Sapphire
35Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Takafumi Yao, Yuji Kagamitani, Naruhiro Hoshino, Dirk Ehrentraut, Tsuguo Fukuda
J. Cryst. Growth 310 (2008) 896-899
Photoluminescence from (0001) GaN Grown by the Acidic Ammonothermal Technique
34Jun-Seok Ha, Seogwoo Lee, Hyun-Jae Lee, Hyo-Jong, Lee, Sang-Hyun Lee, Hiroki Goto, Takashi Kato, Katsushi Fujii, Meoung-Whan Cho, Takafumi Yao
IEEE Photonic Tech. Lett. 20 (2008) 175-177
The Fabrication of Vertical Light Emitting Diodes using Chemical Lift-Off Process
33Yutaka Ohno, Haruhiko Koizumi, Toshinori Taishi, and Ichiro Yonenaga, Katushi Fujii, Hiroki Goto, Takafumi Yao
Appl. Phys. Lett. 92 (2008) 011922-1 – 011922-3
Light Emission due to Dislocations in Wurtzite ZnO Bulk Single Crystals Freshly Iintroduced by Plastic Deformation
32Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Takafumi Yao, Naruhiro Hoshino, Yuji Kagamitani, Dirk Ehrentraut, Tsuguo Fukuda
Phys. Stat. Sol. (a) 204 (2007) 4266-4271
Near Band-edge 3.357 eV Emission of Ga-face (0001) GaN Grown by Ammonothermal Method
31Katsushi Fujii, Yasuhiro Iwaki, Hisashi Masui, Troy J. Baker, Michael Iza, Hitoshi Sato, John Kaeding, Takafumi Yao, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Kazuhiro Ohkawa
Jpn. J. Appl. Phys. 46 (2007) 6573-6578
Photoelectrochemical Properties of Nonpolar and Semipolar GaN
30Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Takafumi Yao, Naruhiro Hoshino, Yuji Kagamitani, Dirk Ehrentraut, Tsuguo Fukuda
Phys. Stat. Sol. (a) 204 (2007) 3509-3513
Deep Level Luminescence at 1.93 eV in GaN Prepared by Ammonothermal Growth
29Katsushi Fujii, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa
Phys. Stat. Sol. (c) 4 (2007) 2650-2653
Investigation of Surface Morphology of n-type GaN after Photoelectrochemical Reaction in Various Solutions for H2 Gas Generation
28Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato, Takafumi Yao
Phys. Stat. Sol. (c) 4 (2007) 2314-2317
Metal Catalyst Enhanced Growth of High Quality and Ddensity GaN Dots on Si(111) by Implant Source Growth
27Masato Ono, Katsushi Fujii, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Takafumi Yao, Kazuhiro Ohkawa
J. Chem. Phys. 126 (2007) 054708-1 - 054708-7
Photoelectrochemical Reactions and H2 Generation at Zero Bias Optimized by Carrier Concentration of n-Type GaN
26Katsushi Fujii, Masato Ono, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Kazuhiro Ohkawa
J. Electrochem. Soc.154 (2007) B175-B179
Band-edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN alloys
25Katsushi Fujii, Kazuhiro Ohkawa
Phys. Stat. Sol. (c) 3 (2006) 2270-2273
Hydrogen Generation from Aqueous Water using n-GaN by Photoassisted Electrolysis
24Katsushi Fujii, Kazuhiro Ohkawa
J. Electrochem. Soc. 153 (2006) A468-A471
Bias Assisted H2 Generation in HCl and KOH Solution using n-type GaN Photoelectrode
23Katsushi Fujii, Kazuhide Kusakabe, Kazuhiro Ohkawa
Jpn. J. Appl. Phys. 44 (2005) 7433-7435
Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
22Katsushi Fujii, Kazuhiro Ohkawa
Jpn. J. Appl. Phys. 44 (2005) L909-L911
Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
21Katsushi Fujii, Takeshi Karasawa, Kazuhiro Ohkawa
Jpn. J. Appl. Phys. 44 (2005) L543-L545
Hydrogen Gas Generation by Splitting Aqueous Water Using n-type GaN Photoelectrode with Anodic Oxidation
20Tae Mochizuki, Yoji Tokumitsu, Katsushi Fujii, Carlo Cavallotti
J. Crystal Growth 273 (2005) 464-473
Influence of In-situ HCl Gas Cleaning on n/p-type GaAs and AlGaAs Regrown Interfaces in MOCVD
19Katsushi Fujii, Tae Mochizuki, Yoji Tokumitsu
J. Crystal Growth 259 (2003) 327-334
Surface Orientation Dependency for AlGaAs Growth Rate with/without HCl in MOCVD
18Katsushi Fujii, Kazushige Kawamura, Hideki Gotoh
J. Crystal Growth 221 (2000) 75-80
Influence of Zn Incorporation on AlxGa1-xAs Crystal Growth by MOVPE
17Katsushi Fujii, Kazushige Kawamura, Hideki Gotoh
J. Crystal Growth 221 (2000) 41-46
Impurity Incorporation of Unintentionally doped AlxGa1-xAs during MOVPE
16Katsushi Fujii, Makoto Satoh, Kazushige Kawamura, Hideki Gotoh
J. Crystal Growth 204 (1999) 10-18
Dependence of Carbon Incorporation on Growth Conditions for Unintentionally doped AlGaAs during Metalorganic Vapor-Phase Epitaxy
15Satoru Nagao, Katsushi Fujii, Toshinari Fujimori, Hideki Gotoh, H. Ito, F. Minami
J. Crystal Growth 175-176 (1997) 1157-1161
Radiative Decay in Type-II GaP/AlP/GaP Quantum Wells
14Katsushi Fujii, Kenji Shimoyama, Nobuyuki Hosoi, Kazumasa Kiyomi, Atsunori Yamauchi, Hideki Gotoh
J. Crystal Growth 170 (1997) 679-684
Dependence of Deposition Selectivity for MOVPE of AlGaAs using HCl gas on the Orientation of the Substrate and the Orientation of the Stripe of SiNx Masks
13Yuichi Inoue, Kenji Shimoyama, Katsushi Fujii, Hideki Gotoh
J. Crystal Growth 145 (1994) 881-885
Fabrication of AlxGa1-xAs Buried Heterostructure Laser Diodes by In-situ Gas Etching and Selective-area Matalorganic Vapor Phase Epitaxy
12Kenji Shimoyama, Satoru Nagao, Yuichi Inoue, Kazumasa Kiyomi, Nobuyuki Hosoi, Katsushi Fujii, Hideki Gotoh
J. Crystal Growth 145 (1994) 734-739
Fabrication of Quantum Wire Structures by In-situ Gas Etching and Selective-area Metalorganic Vapor Phase Epitaxy Regrowth
11Kenji Shimoyama, Nobuyuki Hosoi, Katsushi Fujii, Hideki Gotoh
J. Crystal Growth 145 (1994) 283-290
Facet Growth of AlxGa1-xAs with HCl Gas by Metalorganic Vapor Phase Epitaxy
10Katsushi Fujii, Kenji Shimoyama, Hiroshi Miyata, Yuichi Inoue, Nobuyuki Hosoi, Hideki Gotoh
J. Crystal Growth 145 (1994) 277-282
Model for In-situ Etching and Selective Epitaxy of AlxGa1-xAs with HCl Gas by Metalorganic Vapor Phase Epitaxy
09Kenji Shimoyama, Yuichi Inoue, Katsushi Fujii, Hideki Gotoh
Materials Science and Engineering B 17 (1993) 29-33
Selective Epitaxial Growth of In1-xAlxAs by Metal-Organic Vapour-Phase Epitaxy
08Yasumasa Okada, Katsushi Fujii, Fumio Orito, Shunsuke Muto
J. Appl. Phys. 73 (1993) 1675-1680
Defect Reactions by Heat Treatment of Heavily Silicon Doped Gallium Arsenide
07Katsushi Fujii, Yasumasa Okada, Fumio Orito
J. Appl. Phys. 73 (1993) 88-94
The Effect of Silicon Doping on Lattice Parameter and Silicon Related Defects in Gallium Arsenide Grown by the Gradient Freeze Method
06Yasumasa Okada, Katsushi Fujii
Material Science Forum 117-118 (1993) 381-386
Various Configurations of Silicon-Related Defects in GaAs
05Katsushi Fujii, Fumio Orito, Hisanori Fujita
Material Science Forum 117-118 (1993) 393-398
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
04Kenji Shimoyama, Yuichi Inoue, Katsushi Fujii, Hideki Gotoh
J. Crystal Growth 124 (1992) 235-242
Novel Selective Area Growth of AlGaAs and AlAs with HCl Gas by MOVPE
03Syunsuke Muto, Seiji Takeda, Mitsuji Hirata, Katsushi Fujii, K. Ibe
Philosophical Magazine A 66 (1992) 257-268
Structure of Planar Aggregates of Si in Heavily Si-doped GaAs
02Katsushi Fujii, Fumio Orito, Hisanori Fujita, Tadashige Sato
J. Crystal Growth 121 (1992) 255-266
The Role of Diffusion Barrier Temperature in Gallium Arsenide Crystals Grown by the Gradient Freeze Method
01Fumio Orito, Katsushi Fujii, Yasumasa Okada
J. Appl. Phys., 68 (1990) 5696-5699
Formation and Behavior of BGaVAs Complex Defects in Gallium Arsenide Grown by Liquid-Encapsulated Czochralski Method
＜＜国際会議等論文：査読あり＞＞ （トータル：17）
17Yuya Taki, Zhenquan Tan, Satoshi Ohara, Takashi Itoh, Yoshiaki Nakano, Katsushi Fujii, Masakazu Sugiyama
Mater. Res. Soc. Symp. Proc. 1647 (2014) DOI: 10.1557/opl.2014.406
Synthesis of CaMn2O4-Related Electrocatalyst for Oxygen Evolution Electrode of Water-Splitting
16Heng Zhong, Katsushi Fujii, Yoshiaki Nakano
Mater. Res. Soc. Symp. Proc. 1647 (2014) DOI: 10.1557/opl.2014.404
Effect of KHCO3, K2CO3 and CO2 on the Electrochemical Reduction of CO2 into Organics on a Cu Electrode for the Solar Energy Conversion and Storage
15Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
Mater. Res. Soc. Symp. Proc. 1647 (2014) DOI: 10.1557/opl.2014.172
Surface Stabilities of n-type GaN Dependent on Electrolyte under Photoelectrochemical Reactions
14Katsushi Fujii, Shinichiro Nakamura, Kentaroh Watanabe, Behgol Bagheri, Masakazu Sugiyama, Yoshiaki Nakano
Mater. Res. Soc. Symp. Proc. 1491 (2013) DOI: 10.1557/opl.2012.1739
Over 12% Light to Hydrogen Energy Conversion Efficiency of Hydrogen Generation from Water: New System Concept, Concentrated Photovoltaic Electrochemical Cell (CPEC)
13Katsushi Fujii, Kayo Koike, Mika Atsumi, Takashi Itoh, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano
Mater. Res. Soc. Symp. Proc. 1387 (2012) DOI: 10.1557/opl.2012.769
Effects of GaN Thin Layer on InGaN at Electrolyte-Semiconductor Interface for the Application of Photoelectrochemical Water Splitting
12Katsushi Fujii, Keiichi Sato, Takashi Kato, Tsutomu Minegishi, Takafumi Yao
Mater. Res. Soc. Symp. Proc. 1202 (2010) 1202-I07-3.1-6
Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN
11Katsushi Fujii, Takashi Kato, Keiichi Sato, In-Ho Im, Ji-Ho Chang, Takafumi Yao
Mater. Res. Soc. Symp. Proc. 1127 (2009) 1127-T04-1.1-6
Formation of GaN Nanocrystal on Si and Its Photoelectrochemical Application
10Katsushi Fujii, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa
ECS Transactions 13 (2008) 177-183
Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN
9Gakuyo Fujimoto, Katsushi Fujii, Tsutomu Minegishi, Hiroki Goto, Takenari Goto, Takafumi Yao
Mater. Res. Soc. Symp. Proc. 955E (2007) 0955-I15-08
Effects of Surface Treatments on optical Properties of GaN
8Katsushi Fujii, Masato Ono, Takashi Ito, Kazuhiro Ohkawa
Mater. Res. Soc. Symp. Proc. 885E (2006) 0885-A11-04.1-4
Characteristics of H2 Gas Generation using GaN Photoelectrolysis in HCl Solution
7Kenji Shimoyama, Katsushi Fujii, Yuichi Inoue, Hideki Gotoh
11th Record of Alloy Semiconductor Physics and Electronics Symposium, July 8-10, 1992, Kyoto, 371-378
Selective Growth of AlAs by MOVPE with Large Area Passivation Masks
6Kenji Shimoyama, Yuichi Inoue, Katsushi Fujii, Hideki Gotoh
11th Record of Alloy Semiconductor Physics and Electronics Symposium, July 8-10, 1992, Kyoto, 259-266
Improvement of Growth-Interrupted Interface Qualities by HCl Gas Etching in MOVPE Reactors
5Seiji Takeda, Mitsuji Hirata, Tadashige Sato, Hisanori Fujita, Katsushi Fujii
Defect Control in Semiconductors, K. Sumino (Ed.), Elsevier Science Publishers B.V. (North Holland), 1990, 1111-1116
Defects and Microstructures in Vapor Phase Epitaxial Grown GaAsxP1-x/GaP
4Katsushi Fujii, Mitsuji Hirata, Hisanori Fujita, Seiji Takeda
Defect Control in Semiconductors, K. Sumino (Ed.), Elsevier Science Publishers B.V. (North Holland), 1990, 667-672
Solid-Liquid Interface Shape and Characteristic Structuaral Defects in Gallium Arsenide Single Crystals Grown by the Gradient Freeze Method
3Seiji Takeda, Mitsuji Hirata, Hisanori Fujita, Tadashige Sato, Katsushi Fujii
Mat. Res. Soc. Symp. Proc. 148 (1989) 367-372
Defect at the Interface of GaAsxP1-x/GaP Grown by Vapor Phase Epitaxy
2Mitsuji Hirata, Seiji Takeda, Katsushi Fujii
5th Conf. On Semi-insulating III-V Materials, Malmo, Sweden, 1988, Chap. 6, 549-554
Characterization of defects in Chromium Doped Gallium Arsenide Single Crystals
１Mitsuji Hirata, Seiji Takeda, Katsushi Fujii
Mat. Res. Soc. Symp. Proc. 104 (1988) 495-498
Characterization of Defects in GaP, GaAs, and GaAs1-xPx Electroluminescent Diodes by Transmission Electron Microscopy
＜＜出版物（総説・解説）＞＞（トータル13）
13藤井克司
オプトニューズ8 (2013) No. 4, 15-21 (Vol. 8, No. 4, pp15-21)
電気化学的に行う、光エネルギーを化学エネルギーに変換する技術の現状
12藤井克司
Petrotech 35 (2012) 475-479 (Vol. 35, No. 7, pp19-23, 2012.07)
窒化物半導体を用いた光電気化学反応による水を原料とした水素の生成
11藤井克司、中村振一郎
現代化学 pp41-47, 2011.10
半導体で人工光合成に挑む －光・化学エネルギー変換の実現に向けて－
10藤井克司、八百隆文
スマートハウスの発電･蓄電･給電技術の最前線 田路和幸監修 シーエムシー出版 pp170-179, 2011.03.01
第１章 東北大学の取り組み、2.2 LED
9八百隆文、藤井克司、神門賢二
発光ダイオード 朝倉書店 2010
(E. Fred Schubert, “Light Emitting Diodes (Second Edition), Cambridge University Press 2006”)の日本語翻訳本、第9 – 15, 24章担当
8Katsushi Fujii, Takafumi Yao, Kazuhiro Ohkawa <Invited Summary>
AIP Conference Proceedings 987, Water Dnamics; 5th International Workshop on Water Dynamics, ed. by K. Tohji, N. Tsuchiya, B. Jeyadevan,3-8, 2008
Photoelectrochemical Reactions and Hydrogen Evolution of III-nitrides Semiconductors
7藤井克司、小野雅人、伊藤高志、岩城安浩、大川和宏
信学技報105(326)47, 2005 ED2005-149
窒化物半導体を用いた光電気化学反応による水素発生
6藤井克司、大川和宏
信学技報105(90)63, 2005 ED2005-46
GaNを用いた水の光電気分解デバイス
5下山謙司、藤井克司、後藤秀樹
Mitsubishi Kasei R&D Review 7 (2) 64, 1993
高Al組成化合物のMOCVDによる選択成長
4藤井克司、藤田尚徳、竹田精治、平田光児
半導体研究(37) 西澤潤一編 工業調査会 pp3-32, 1992
ボート成長法によるGaAs結晶の結晶欠陥
3岡田安正、藤井克司、折戸文夫、武藤俊介
電子技術総合研究所彙報56巻6号p16, 1992
高Si濃度GaAs結晶中に熱処理による欠陥反応
2藤井克司、岡田安正、折戸文夫
電子技術総合研究所彙報56巻6号p1, 1992
Gradient Freeze法により成長したGaAs中のSiが関与する欠陥
１佐藤忠重、藤井克司、藤田尚徳、竹田精治、平田光児
Mitsubishi Kasei R&D Review 5 (2) 61, 1991
気相成長GaAs1-xPx/GaPエピタキシャル結晶中の結晶欠陥の観察
学位論文
Katsshi Fujii
Nov. 1993, 大阪大学（理学 1994.03）
Defects in Gallium Arsenide Single Crystal Grown by Gradient Freeze Method
＜＜国際会議発表＞＞ （トータル88）
88Katsushi Fujii, Kayo Koike, Takenari Goto Masakazu Sugiyama, Yoshiaki Nakano
The 20th International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-20) (2014.07-08, HZB (Berlin), Germany) PA4-5
Carrier Transfer Mechanisms for Photoelectrochemical Water Splitting of n-type GaN via Intermediate State and Valence Band Edge
87Kayo Koike, Akihiro Nakamura, Kazuhiro Yamamoto, Satoshi Ohara, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
The 20th International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-20) (2014.07-08, HZB (Berlin), Germany) PA4-4
Effects of NiO Co-catalyst for Photocurrent and Surface Stability Improvement of n-type GaN Photoelectrode
86Heng Zhong, Katsushi Fujii, Yoshiaki Nakano, Fangming Jin
The 20th International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-20) (2014.07-08, HZB (Berlin), Germany) C2-4
Study of the Active Reactant in the Electrochemical Reduction of CO2 in Bicarbonate Aqueous Solutions
85Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
EMS-33 <33rd Electric Materials Symposium> (2014.07, Shuzenji (Sizuoka), Japan) We2-9
Effect of AlN Growth Temperature on the u-GaN/AlN/n-GaN Water Splitting Photocathode
84Yuya Taki, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
Solar Fuel 14 (2014. 06, Montreal, Canada) Day-2 16:00-16:15
Analysis for Efficiency Improvement of Solar Cell Driven Electrochemical Water Splitting and the Water Oxidation Electrocatalyst
83Kayo Koike, Akihiro Nakamura, Futami Sano, Kazuhiro Yamamoto, Satoshi Ohara, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
2014MRS-Spring Meeting <Materials Research Symposium 2014 Spring Meeting> (2014. 04, San Francisco, USA) D8.20
Surface Stabilities of NiO-Loaded n-Type GaN Dependent on Electrolyte under Photoelectrochemical Reactions
82Katsushi Fujii, Takenari Goto, Takafumi Yao
2014MRS-Spring Meeting <Materials Research Symposium 2014 Spring Meeting> (2014. 04, San Francisco, USA) G6.01
Properties of Intermediate State for Photoelectrochemical Reaction of n-Type GaN: The Role about the Carrier Transfer between an Electrolyte and A Semiconductor
81Katsushi Fujii, Akihiro Nakamura, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano
Gordon Research Conference (GRC) Renewable Energy: Solar Fuels (Renewable Energy for the Future) (2014. 01, Ventura, CA, USA) Poster Presentation Mon/Wed Integrated Systems, membranes 67
Hydrogen Generation from Water by Concentrated Photovoltaic Electrochemical Cell and its Future Prospects
80Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
2013MRS-Fall Meeting <Materials Research Symposium 2013 Fall Meeting> (2013. 12, Boston, USA) GG3.17
Surface Stabilities of n-Type GaN Dependent on Electrolyte under Photoelectrochemical Reactions
79Shin Nakamura, Katsushi Fujii, Koji Ogata, Makoto Hatakeyama, Yuanqing Wang, Xu Zeng, Fangming Jin
2013MRS-Fall Meeting <Materials Research Symposium 2013 Fall Meeting> (2013. 12, Boston, USA) GG3.04
Activation of the CO2 Molecule, A Theoretical Study
78Yuya Taki, Zhenquan Tan, Satoshi Ohara, Takashi Ito, Yoshiaki Nakano, Katsushi Fujii, Masakazu Sugiyama
2013MRS-Fall Meeting <Materials Research Symposium 2013 Fall Meeting> (2013. 12, Boston, USA) Z10.56
Synthesis of CaMn2O4-Related Electrocatalyst for Oxygen Evolution Electrode of Water-Splitting
77Heng Zhong, Katsushi Fujii, Yoshiaki Nakano
2013MRS-Fall Meeting <Materials Research Symposium 2013 Fall Meeting> (2013. 12, Boston, USA) Z10.52
Effect of KHCO3, K2CO3 and CO2 on the Electrochemical Reduction of CO2 into Organics on a Cu Electrode for the Solar Energy Conversion and Storage
76Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
2013MRS-Fall Meeting <Materials Research Symposium 2013 Fall Meeting> (2013. 12, Boston, USA) R5.06
Optimization of the AlN Thickness for the Polarization Engineered Photocathode Consisting of Only N-Type Nitrides for Water Splitting
75Katsushi Fujii <Invited>
The First SJTU (Shanghai Jiao Tong University)-RIKEN Workshop on Energy and Environment (2013.10 Shanghai, China) Session 2, 1
Structured Semiconductor Electrodes for Photoelectrochemical Reactions
74Heng Zhong, Katsushi Fujii, Masakazu Sugiyama, Yoshiyuki Nakano
NMS-IX and FCFP-XXIII <IUPAC 9th International Conference on Novel Materials and Synthesis and 23rd International Symposium on Fine Chemistry and Functional Polymers> (2013.10 Shanghai, China) Session 48, P11
Effect of Carbonate and Bicarbonate on the Effect of Carbonate and Bicarbonate on the Electrochemical Reduction of CO2 into Organics for the Solar Energy Conversion
73Katsushi Fujii <Invited>
NMS-IX and FCFP-XXIII <IUPAC 9th International Conference on Novel Materials and Synthesis and 23rd International Symposium on Fine Chemistry and Functional Polymers> (2013.10 Shanghai, China) Session 22, IL 056
Suggestion of Energy Generation System Using Photovoltaic and Electrochemical Cell
72Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
ICNS-10 <10th International Conference on Nitride Semiconductors> (2013.08, Washington Harbor, MD, USA) D4.10
Novel Nitride Photoelectrode Based on Polarization Engineering for Water Splitting
71Hyojung Bae, Akihiro Nakamura, Kayo Koike, Hyung-Jo Park, Tak Jeong, Hyo -Jong Lee, Katsushi Fujii, Jun -Seok Ha
ICNS-10 <10th International Conference on Nitride Semiconductors> (2013.08, Washington Harbor, MD, USA) DP2.28
Photoelectrochemical Properties Depending on pH of Electrolyte
70Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
ICNS-10 <10th International Conference on Nitride Semiconductors> (2013.08, Washington Harbor, MD, USA) CP2.17
Surface Stability of n-Type GaN Dependent on Carrier Concentration and Electrolytes under Photoelectrochemical Reactions
69Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
EMS-32 <32nd Electric Materials Symposium> (2013.07, Biwako (Shiga), Japan) Th5-7
Optimization of the AlN Thickness for the Polarization Engineered Nitride Photocathode for Water Splitting
68Katsushi Fujii, Shinichiro Nakamura, Masakazu Sugiyama, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nankano
Solar Fuel 13 (2013. 06, Granada, Spain) Day-1 Poster
System Cost Estimation of Concentrated Photovoltaic Electrochemical Cell (CPEC): Solar to Hydrogen Energy Conversion by Water Splitting using Conventional Concentrated Photovoltaic and Electrochemical Cell
67Katsushi Fujii, Tohma Watanabe, Yuya Taki, Shinichiro Nakamura, Masakazu Sugiyama, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nankano
Solar Fuel 13 (2013. 06, Granada, Spain) Day-1 17:15
Over 14% Solar to Hydrogen Energy Conversion Efficiency by Water Splitting using Conventional Concentrated Photovoltaic and Electrochemical Cell: Concentrated Photovoltaic Electrochemical Cell (CPEC)
66Shinichiro Nakamura, Katsushi Fujii, Makoto Hatakeyama, Hiroya Nakata, Waka Uchida, Masamitsu Wakabayashi, Koji Ogata, Satoshi Yokojima
2012MRS-Fall Meeting <Materials Research Symposium 2012 Fall Meeting> (2012. 11, Boston, USA) R5.06
Theoretical Study on the Mechanism of Oxygen Evolving Center in PSII
65Masakazu Sugiyama, Katsushi Fujii, Shinichiro Nakamura, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nankano
2012MRS-Fall Meeting <Materials Research Symposium 2012 Fall Meeting> (2012. 11, Boston, USA) E16.02
Multijunction Photovoltaic Design for Concentrated Photovoltaic Electrochemical Cell (CPEC): Toward 30% Energy Conversion Efficiency from Sunlight to Hydrogen
64Katsushi Fujii, Shinichiro Nakamura, Masakazu Sugiyama, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nankano
2012MRS-Fall Meeting <Materials Research Symposium 2012 Fall Meeting> (2012. 11, Boston, USA) C11.06
Over 12% light to hydrogen energy conversion efficiency of hydrogen generation from water: New system concept, Concentrated Photovoltaic Electrochemical Cell (CPEC)
63Katsushi Fujii <Invited>
NMS-VIII and FCFP-XXII <IUPAC 8th International Conference on Novel Materials and Synthesis and 22nd International Symposium on Fine Chemistry and Functional Polymers> (2012.10 Xi’an, China) Session 15, IL 051
Effect of InxGa1-xN/GaN Quantum Structure for Photoelectrochemical Water Splitting
62Hyo-Jung Bae, Akihiro Nakamura, Katsushi Fujii, Hung-Jo Park, Tak Jeong, Hyo-Jong Lee, Jun-Seok Ha, YoungBoo Moon, Tae-Sung Oh
International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo Japan) TuP-ED-9
Polarity effect on the Photoelectrochemical Properties of Ga-faced and N-faced Free Standing GaN Substrate
61Kazehiko Anazawa, Sodabanlu Hassanet, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo Japan) TuP-GR-30
Impact of accumulated stress on the quality of InGaN/AlN MQWs on GaN grown by MOVPE
60Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii
International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo Japan) MoP-ED-17
Comparison between Semiconductor-Electrolyte and Semiconductor-Metal Schottky Junctions using AlGaN/GaN Photoelectrochemical Electrode
59Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takafumi Yao, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano
The 19th International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-19) (2012.07-08, CalTech (Pasadena), USA) E6.4 (2012.07. 30 S7 #4596)
Quantum Tunneling Effect of InxGa1-xN/GaN Nano Structures toward to (Photo)electrochemical Water Splitting
58Xu Zeng, Fang-Ming Jin, Makoto Hatakeyama, Koji Ogata, Jian-Ke Liu, H. Zhong, Katsushi Fujii, Shinichiro Nakamura
1st International Workshop on Solar to Chemical Energy Storage (2012.07, Sendai, Japan) W-4-3
Study on the CO2 Conversion into Formic Acid under Hydrothermal Conditions
57Hyo-Jung Bae, Akihiro Nakamura, Hung-Jo Park, Hyo-Jong Lee, Jun-Seok Ha, Tae-Sung Oh, Katsushi Fujii
1st International Workshop on Solar to Chemical Energy Storage (2012.07, Sendai, Japan) W-1-7
Annealing Effect of TiO2 Thin Film on Photoelectrochmical Properties
56Heng Zhong, Fang-Ming Jin, Xu Zeng, Ying Gao, Katsushi Fujii
1st International Workshop on Solar to Chemical Energy Storage (2012.07, Sendai, Japan) W-1-5
Highly efficient reduction of NaHCO3 and water into HCOOH with the use of Fe reductant and Cu Catalyst under Hydrothermal Conditions
55Akihiro Nakamura, Yoshiaki Nakano, Masakazu Sugiyama, Katsushi Fujii
1st International Workshop on Solar to Chemical Energy Storage (2012.07, Sendai, Japan) W-1-3
Comparison between Semiconductor-Electrolyte and Semicondustor-Metal Schottky Junctions Using AIGaN/GaN Photoelectrochemical Electrode
54Akihiro Nakamura, Masakazu Sugiyama, Katsushi Fujii
EMS-31 <31st Electric Materials Symposium> (2012.07, Izu-Nagaoka, Japan) We1-2
Effects of AlGaN thin layer on n-type GaN for photoelectrochemical reactions
53Kazehiko Anazawa, Sodabanlu Hassanet, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
16th International Conference on Metal Organic Vapor Phase Epitaxy (2012.05, Busan, Korea) MoA3-5
Growth of Strain-Compensated InGaN/AlN MQWs on GaN by MOVPE
52Katsushi Fujii, Akihiro Nakamura, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano
Gordon Research Conference (GRC) Renewable Energy: Solar Fuels (2012.05, Il Lucca (Barga), Italy) Poster Presentation
Quantum Effect Approach to Photoelectrochemical Reaction of Water using InGaN/GaN
51Katsushi Fujii, Kayo Koike, Mika Atsumi, Takashi Itoh, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano
2011MRS-Fall Meeting <Materials Research Symposium 2011 Fall Meeting> (2011. 11-12, Boston, USA) E6.4
Effects of GaN Thin Layer on InGaN at Electrolyte-Semiconductor Interface for the Application of Photoelectrochemical Water Splitting
50Katsushi Fujii, Masakazu Sugiyama, Shinichiro Nakamura <Invited>
NMS-VII and FCFP-XXI <IUPAC 7th International Conference on Novel Materials and Synthesis and 21st International Symposium on Fine Chemistry and Functional Polymers> (2011.10 Shanghai, China) Session 23, IL 67
Effects of GaN Properties for Photoelectrochemical Water Splitting to Produce Hydrogen
49Katsushi Fujii, Shinichiro Nakamura, Satoshi Yokojima, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano
220th Electrochemical Society (ECS) Meeting (2011.10, Boston, USA) A3 #189
Photoelectrochemical Water Splitting by Applying a Mechanism of Photochemical System II in a Plant
48Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh, Takafumi Yao
ICNS-9 <9th International Conference on Nitride Semiconductors> (2011.07, Glasgow, UK) PE2 16
Photoluminescence Changes of n-type GaN by Photoelectrochemical Treatment
47Katsushi Fujii, Takashi Kato, Keiichi Sato, Tsutomu Minegishi, Takahiro Yamada, Hisanori Yamane, Takafumi Yao*, Masakazu Sugiyama, Yoshiaki Nakano
EMS-30 <30th Electric Materials Symposium> (2011.06-07, Kusatsu, Japan) We1-19
Difference of GaN Photoelectrochemical Properties in Growth Method
46Katsushi Fujii <Invited>
First Saudi Workshop on Photovoltaic Power Generation (2011.05, Dhahran, Saudi Arabia)
Photoelectrochemical Reaction to Storage Energy (Water Splitting to Generate Hydrogen by Nitride Semiconductors)
45Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takafumi Yao
IWN2010 <International Workshop on Nitride Semiconductors> (2010.09, Tampa, Florida, USA) J2.6
Time Dependence of Water-reducing Photocurrent with Change of the Characteristics of n-type GaN Photo-illuminated Working Electrodes
44Hyun-Jae Lee, Jiho Chang, Katsushi Fujii, Takenari Goto, Takafumi Yao
IWN2010 <International Workshop on Nitride Semiconductors> (2010.09, Tampa, Florida, USA) B2.3
High-quality m-plane GaN Films Directly Grown on m-plane Sapphire by using Hydride Vapor Phase Epitaxy (HVPE)
43Hiroki Goto, Hyun-Jae Lee, Seogwoo Lee, Takenari Goto, Katsushi Fujii, Meoungwhan Cho, Takafumi Yao
IWN2010 <International Workshop on Nitride Semiconductors> (2010.09, Tampa, Florida, USA) BP1.1
Fabrication of Free-standing GaN Substrates by Substrate Fracturing and Chemical Lift-off
42Katsushi Fujii, Takashi Kato, Keiichi Sato, Kayo Koike, Takahiro Yamada, Hisanori Yamane, Takafumi Yao
ISPlasma2010 <2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials> (2010.03, Nagoya, Japan) PA035B
Photoelectrochemical Evaluation of Bulk GaN Single Crystal Dependent on Growth Method
41Katsushi Fujii, Keiichi Sato, Takashi Kato, Tsutomu Minegishi, Takafumi Yao
2009MRS-Fall Meeting <Materials Research Symposium 2009 Fall Meeting> (2009. 11-12, Boston, USA) I7.3
Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN
40Katsushi Fujii, Takafumi Yao <Invited>
2009 Asian Core Workshop on Wide Bandgap Semiconductors (2009.10, Geoungju, Korea) Session II-3
Prospects of GaN for Photoelectrochemical Water Splitting to produce Hydrogen
39Kayo Koike, Keiichi Sato, Katsushi Fujii, Takenari Goto, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Poster Session III ThP143
Time Variation of GaN Photoelectrochemical Reactions Affected by Light Intensity and Applied Bias
38Katsushi Fujii, Takashi Kato, Keiichi Sato, Jiho Chang, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Poster Session II TP82
Photoelectrochemical Application of GaN Nanostructures on Si for Hydrogen Generation by Water Reduction
37Hyun-Jae Lee, Takenari Goto, Chinkyo Kim, Jiho Chang, Kayo Koike, Katsushi Fujii, Soon-Ku Hong, Meoung-Whan Cho, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Poster Session I MP45
Stress Study of Free-Standing GaN Self-Separated by Using an Evaporable Buffer Layer (EBL)
36Si-Young Kim, Hyun-Jae Lee, Seung-Hwan Park, Woong Lee, Mi-Na Jung, Katsushi Fujii, Takenari Goto, Takashi Sekiguchi, Ji-Ho Chang, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Poster Session I MP19
Hydride Vapor Phase Epitaxy of GaN Films on ZnO Templates with Various Polarities
35Mina Jung, Jiho Chang, Hyun-Jae Lee, Chinkyo Kim, Seunghwan Park, Jieun Koo, Hongseung Kim, Jun-Seok Ha, Jinsub Park, Katsushi Fujii, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Poster Session I MP2
Plasma Assisted Molecular Beam Epitaxy of GaN Films on ZnO Templates
34Hyun-Jae Lee, Jiho Chang, Chinkyo Kim, Si-Young Kim, Kayo Koike, Katsushi Fujii, Takenari Goto, Takafumi Yao
ICNS-8 <8th International Conference on Nitride Semiconductors> (2009.10, Jeju, Korea) Session E “Bulk Growth II” E3
Investigation of Structural Imperfections in M-GaN Films Grown on m-Plane (10-10) Al2O3 Substrates by using Hydride Vapor Phase Epitaxy (HVPE): Anti-Phase Domains, Twins, Asymmetrical Wafer Bowing and Crystallinity
33Takafumi Yao, Katsushi Fujii <Keynote>
Japan-Korea Asian Core Program General Meeting in conjunction with Global COE Program International Conference 2009 (2009.09, Sendai, Japan) Session C “Surface and Semiconductor Materials”
GaN- and ZnO-based Widegap Semiconductors
32Katsushi Fujii
Japan-Korea Asian Core Program General Meeting in conjunction with Global COE Program International Conference 2009 (2009.09, Sendai, Japan) Poster Session P-75
Dependence of n-type GaN Photoelectrochemical Reaction Under Different Bias and Light Intensity
31Keiichi Sato, Katsushi Fujii, Kayo Koike, Takafumi Yao
The 4th International Symposium on Medical, Bio- and Nano-Electronics (2009. 03, Sendai, JAPAN) P-37
Time Variation of Photoelectrochemical Reaction using GaN Affected by Bias and Light Intensity
30Katsushi Fujii, Takashi Kato, In-Ho Im, Ji-Ho Chang, Takafumi Yao
2008MRS-Fall Meeting <Materials Research Symposium 2008 Fall Meeting> (2008. 11-12, Boston, USA) T4.1
Formation of GaN Nanocrystal on Si and Its Photoelectrochemical Application
29Hyun-Jae Lee, Jun-Seok Ha, Hyo-Jong, Lee, Sang-Hyun Lee, Soon-Ku Hong, Katsushi Fujii, Meoung-Whan Cho, Takenari Goto, Takafumi Yao
IWN2008 <International Workshop on Nitride Semiconductors> (2008.10, Montreux, Switzerland) We1-A4
Fabrication of free-standing GaN substrate using evaporating buffer layer
28Katsushi Fujii, Keiichi Sato, Takashi Kato, Kayo Koike, Takafumi Yao
IWN2008 <International Workshop on Nitride Semiconductors> (2008.10, Montreux, Switzerland) Mo4-P17
Surface Changes by GaN Photoelectrochemical Treatment using Various Electrolytes with and without C2H5OH
27Keiichi Sato, Katsushi Fujii, Kayo Koike, Takenari Goto, Takafumi Yao
IWN2008 <International Workshop on Nitride Semiconductors> (2008.10, Montreux, Switzerland) Mo4-P10
Anomalous Time Dependence of Photocurrent in GaN during Photoelectrochemical Reaction for H2 Gas Generation in NaOH Aqueous Solution
26 Seogwoo Lee, Jun-Seok Ha, Hyun-Jae Lee, Hyo-Jong, Lee, Sang-Hyun Lee, Katsushi Fujii, Meoung-Whan Cho, Takafumi Yao
DRC2008 <Device Research Conference 2008>, (2008.06, University of California, Santa Barbara, California, USA) Session III-42 (June 23)
The characteristics of chemical lift off method using metallic buffer layer and its application to the vertical light emitting diodes
25Katsushi Fujii, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa
213th Electrochemical Society (ECS) Meeting (2008.05, Pheonix, USA) Session B5, 351
Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN
24 Jun-Seok Ha, Seogwoo Lee, Hyun-Jae Lee, Hyo-Jong, Lee, Sang-Hyun Lee, Takashi Kato, Katsushi Fujii, Meoung-Whan Cho, Takafumi Yao <Invited>
International Symposium on Semiconductor Light Emitting Devices (2008.04-05, Phoenix, USA) Session B, Visible LED I (Monday AM April 28)
The Fabrication of High Brightness Vertical Light Emitting Diodes by Chemical Lift-Off Process
23Katsushi Fujii, Takafumi Yao, Kazuhiro Ohkawa <Invited>
Asian Core Workshops on Wide Band Gap Semiconductors (2008.02, Seoul, Korea) Session IV-1
Hydrogen Evolution of III-Nitride Semiconductors by Photoelectrochemical Reactions
22Katsushi Fujii <Invited>
The 4th International Workshop on Advanced Materials for Information Technology & Applications (IWAMITA) 2007: "Advanced semiconductors" (2007.11, Suwon, Korea) Session II-1
Optical Device Applications of Structured ZnO
21Katsushi Fujii, Takafumi Yao, Kazuhiro Ohkawa <Invited>
IWWD5 <5th International Workshop on Water Dynamics> (2007. 09, Sendai, Japan) WD5 I7
Photoelectrochemical Reactions and Hydrogen Evolution of III-nitride Semiconductors
20Katsushi Fujii, Hitoshi Nakayama, Keiichi Sato, Takashi Kato, Meoungwhan Cho, Takafumi Yao
ICNS-7 <The Seventh International Conference on Nitride Semiconductors> (2007. 09, Las Vegas, USA) ThP105
Improvement of Hydrogen Generation Efficiency using GaN Photoelectrochemical Reaction in Electrolytes with Alcohol
19Yasuhiro Iwaki, Kazuki Yamaguchi, Kazuhide Kusakabe, Katsushi Fujii, Kazuhiro Ohkawa
ICNS-7 <The Seventh International Conference on Nitride Semiconductors> (2007. 09, Las Vegas, USA) Y3 (Wed AM)
Nitride Photocatalyst to Generate Hydrogen Gas from Water
18Katsushi Fujii, Sang Hyun Lee, Tsutomu Minegishi, Takenari Goto, Hiroshi Miyazaki, Takafumi Yao <Invited>
II-VI 2007 <The 13th International Conference on II-VI Compounds> (2007. 09, Jeju, Korea) Th-I-3
ZnO Nanostructures for Novel Optical Devices
17Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Takafumi Yao, Naruhiro Hoshino, Yuji Kagamitani, Dirk Ehrentraut, Tsuguo Fukuda
2007E-MRS-Spring Meeting <European Materials Research Symposium 2007 Spring Meeting> (2007. 05, Strasbourg, France) G-4 3
Photoluminescence of Ga-face GaN Grown by Ammonothermal Method using Acidic Mineralizer
16Takashi Kato, Inho Im, Katsushi Fujii, Takafumi Yao
5th Spring Meeting of the International Society of Electrochemistry (ISE 2007 Spring meeting, Dublin, Ireland) 2007.05.02 Poster
Photoelectrochemical Properties of GaN Nnanodots
15Tsutomu Minegishi, Takashi Hanada, Rafal Boze, Seunghwan Park, Jinsub Park, Kazushi Sumitani, Osami Sakata, Katsushi Fujii, Meoungwhan Cho, Takafumi Yao
2006MRS-Fall Meeting <Materials Research Symposium 2006 Fall Meeting> (2006. 11-12, Boston, USA) K7.21
Selective Growth of Zn- and O-polar ZnO Films by P-MBE for Fabrication of Periodically Polarity-inverted Photonic Crystals
14Gakuyo Fujimoto, Hiroki Goto, Katsushi Fujii, Takenari Goto, Meoungwhan Cho, Takafumi Yao
2006MRS-Fall Meeting <Materials Research Symposium 2006 Fall Meeting> (2006. 11-12, Boston, USA) I15.8
Effects of Surface Treatments on Optical Properties of GaN
13Katsushi Fujii, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa
IWN2006 <International Workshop on Nitride Semiconductors> (2006.10, Kyoto, Japan) MoP2-12
Investigation of Surface Morphology of n-type GaN after Photoelectrochemical Reaction in Various Solutions for H2 Gas Generation
12Takashi Kato, Hitoshi Nakayama, Katsushi Fujii, Takafumi Yao
TOSLEC-1 <Tokyo Workshop on Solar Light Energy Conversion> (2006.09, Tokyo, Japan) P1-14
The Effect of Alcohol in Na2SO4 Solution on Photoelectrolysis Using n-GaN Electrodes
11Katsushi Fujii, Masato Ono, Takafumi Yao, Kazuhiro Ohkawa
TOSLEC-1 <Tokyo Workshop on Solar Light Energy Conversion> (2006.09, Tokyo, Japan) P1-5
A Model for Current Density Dependence on n-type GaN Carrier Concentration for Photoelectrochemical Processes
10Kazuhiro Ohkawa, Katsushi Fujii <Invited>
TOSLEC-1 <Tokyo Workshop on Solar Light Energy Conversion> (2006.09, Tokyo, Japan) Invited Lecture. 7 (Sep.05)
Nitride Photocatalysis
9Katsushi Fujii, Masato Ono, Takashi Ito, Kazuhiro Ohkawa
2005MRS-Fall Meeting <Materials Research Symposium 2005 Fall Meeting> (2005. 11-12, Boston, USA) A11.4
Characteristics of H2 Gas Generation using GaN Photoelectrolysis in HCl Solution
8Katsushi Fujii, Kazuhiro Ohkawa
ICNS-6 <The Sixth International Conference on Nitride Semiconductors> (2005. 08-09, Bremen, Germany) Mo-P-026
Hydrogen Generation from Aqueous Water using n-GaN by Photoassisted Electrolysis
（以下、本人筆頭分のみ）
7Katsushi Fujii, Tae Mochizuki, Yoji Tokumitsu
IC-MOVPE-XI <The Eleventh International Conference on Metal-organic Vapor Phase Epitaxy> (2002.06, Berlin, Germany)
Surface Orientation Dependency for AlGaAs Growth Rate with/without HCl in MOCVD
6Katsushi Fujii, Kazushige Kawamura, Hideki Gotoh
IC-MOVPE-X <The Tenth International Conference on Metal-organic Vapor Phase Epitaxy> (2000.06, Sapporo, Japan)
Influence of Zn Incorporation on AlxGa1-xAs Crystal Growth by MOVPE
5Katsushi Fujii, Kazushige Kawamura, Hideki Gotoh
IC-MOVPE-X <The Tenth International Conference on Metal-organic Vapor Phase Epitaxy> (2000.06, Sapporo, Japan)
Impurity Incorporation of Unintentionally doped AlxGa1-xAs during MOVPE
4Katsushi Fujii, Kenji Shimoyama, Nobuyuki Hosoi, Kazumasa Kiyomi, Atsunori Yamauchi, Hideki Gotoh
IC-MOVPE-VIII <The Eighth International Conference on Metal-organic Vapor Phase Epitaxy> (1996.06, Cardif, UK)
Dependence of Deposition Selectivity for MOVPE of AlGaAs using HCl gas on the Orientation of the Substrate and the Orientation of the Stripe of SiNx Masks
3Katsushi Fujii, Kenji Shimoyama, Hiroshi Miyata, Yuichi Inoue, Nobuyuki Hosoi, Hideki Gotoh
IC-MOVPE-VII <The Seventh International Conference on Metal-organic Vapor Phase Epitaxy> (1994.05, Yokohama, Japan)
Model for In-situ Etching and Selective Epitaxy of AlxGa1-xAs with HCl Gas by Metalorganic Vapor Phase Epitaxy
2Katsushi Fujii, Fumio Orito, Hisanori Fujita
IC-SIS-V <The Fifth International Conference on Shallow Impurities in Semiconductors> (1992.08, Kobe, Japan)
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
１Katsushi Fujii, Mitsuji Hirata, Hisanori Fujita, Seiji Takeda
IC-STDCS <The International Conference on the Science and Technology of Defect Control in Semiconductors> (1989.09, Yokohama, Japan)
Solid-Liquid Interface Shape and Characteristic Structuaral Defects in Gallium Arsenide Single Crystals Grown by the Gradient Freeze Method
＜＜国内会議発表＞＞
（トータル86）
86中村亮裕、藤井克司、杉山正和、中野義昭
第6回窒化物半導体結晶講演会（2014.07）
GaN/AlN/GaN 光電極におけるAlN 成長温度の影響
85藤井克司 （依頼講演）
第10回有機太陽電池シンポジウム（2014.07）(07.14.13:30-14:00)
光化学系IIの機能に倣った既存デバイスの組み合わせによる高効率水分解
84瀧 勇也、藤井克司、杉山正和、中野義昭
2014春、日本化学会第94春季年会 1PC-204
水の電気分解用酸素発生触媒CaMn2O4*xH2Oの触媒特性の結晶性依存性
83藤井克司、杉山正和、中村振一郎
2014春、化学工学会 第79年会 J320
太陽エネルギーを化学エネルギーに効率良く変換する集光型太陽電池-電気化学セル水分解水素生成システム
82中村振一郎、畠山 允、緒方浩二、藤井克司
2014春、応用物理学会（第61回応用物理関係連合講演会）19p-E4-4
自然エネルギー利用の秘密を示唆する天然光合成PSII
81藤井克司、杉山正和、中村振一郎
2014春、応用物理学会（第61回応用物理関係連合講演会）19p-E4-1
自然エネルギーを利用した自立型エネルギーシステム
80瀧 勇也、譚 振権、山本和広、大原 智、伊藤 隆、中野義昭、藤井克司、杉山正和
光機能材料研究会 第20回シンポジウム（2013.12）
ポスター F:水分解 P-41
水の電気分解用酸素発生電極触媒CaMn2O4・xH2Oの評価
Evaluation of CaMn2O4-related electrocatalyst for oxygen evolving electrode of water-splitting
79佐野双美、小畑圭亮、脇一太郎、藤井克司、杉山正和
2013年電気化学秋季大会2K-19
n型GaN光触媒における電気化学特性のPtカソード表面積による影響
78中村振一郎、藤井克司、緒方浩二、畠山 允 （依頼講演）
2013秋、応用物理学会（第74回応用物理学会学術講演会）17p-A12-8
光合成に学ぶ反応設計
77瀧 勇也、譚 振権、大原 智、伊藤 隆、中野義昭、藤井克司、杉山正和
2013秋、応用物理学会（第74回応用物理学会学術講演会）17p-C14-5
水電気分解酸素発生電極用マンガン化合物電極触媒の合成
76Heng Zhong、藤井克司、中野義昭
2013秋、応用物理学会（第74回応用物理学会学術講演会）17a-4-5
Electrochemical Reduction of KHCO3 and NaHCO3 using Cu Electrode for the Energy Conversion and Storage
75中村亮裕、藤井克司、杉山正和、中野義昭 （講演奨励賞受賞記念講演）
2013秋、応用物理学会（第74回応用物理学会学術講演会）16p-B5-1
分極制御窒化物光電極におけるAlN層厚みの影響
74藤井克司 （依頼講演）
平成25 年度 沖縄型植物工場研究会 講演会 －沖縄に適し、医療商工連携・六次産業化を支える－ 2013.05.17
自然エネルギーを利用した自立型エネルギーサイクル－植物工場への応用を考えて－
73中村亮裕、杉山正和、中野義昭、藤井克司
2013春、応用物理学会（第60回応用物理関係連合講演会）30a-G21-1
水分解GaN系光電気化学電極における新規構造の提案
72藤井克司、中村振一郎、杉山正和、渡辺健太郎、Behgol Bagheri、中野義昭 （依頼講演）
2013春、応用物理学会（第60回応用物理関係連合講演会）29p-G22-2
集光型太陽電池－電気化学セルによる水素貯蔵システム
71佐野双美、脇一太郎、岡部伸宏、藤井克司、杉山正和
2013春、応用物理学会（第60回応用物理関係連合講演会）28p-PA1-19
TiO2薄膜堆積によるGaN光触媒のバンド端電位シフト
70 藤井克司 （依頼講演）
理化学研究所 社会知創成中村特別研究室＋遥律機能研究チーム連携第２回ワークショップ「生物を律する揺らぎのメカニズムを追い求めて－光応答と高効率システム－」2012.09.27
天然光合成を半導体物理と電気化学に適用する試み
69中村亮裕、杉山正和、中野義昭、藤井克司
2012秋、応用物理学会（第73回応用物理学会学術講演会）11p-H7-5
AlGaN/GaN光電気化学電極における溶液の影響
68藤井克司 （シンポジウム企画）
2012春、応用物理学会（第59回応用物理関係連合講演会）15a-E2-1
イントロダクトリー「グリーンソサイエティーを拓くエネルギー革新技術」
67藤井克司、後藤武生、八百隆文
2011秋、応用物理学会（第72回応用物理学会学術講演会）01p-N-11
ZnO単結晶による紫外Anti-Stokesフォトルミネッセンス
66 穴澤 風彦、ソダーバンル ハッサネット、藤井 克司、中野 義昭、杉山 正和
2011秋、応用物理学会（第72回応用物理学会学術講演会）31a-ZE-8
MOVPE 法による InGaN/AlN 多重量子井戸の結晶成長および評価
65藤井克司 （依頼講演）
理化学研究所 社会知創成中村特別研究室＋遥律機能研究チーム連携ワークショップ「生物を律する揺らぎのメカニズムを追い求めて－光合成と生体信号－」光合成と生体のゆらぎセッション 2011.04.19 – 20
Mnクラスター機能の無機デバイス化に向けて
64藤井克司、伊藤 隆、田路和幸 （シンポジウム企画）
2010秋、応用物理学会（第71回応用物理学会学術講演会）16p-NE-1
イントロダクトリートーク：エネルギー変換デバイスの現状
63藤井克司、小池佳代、熱海美香、後藤武生、八百隆文
2010秋、応用物理学会（第71回応用物理学会学術講演会）15p-B-10
n型GaNの特性が水還元水素生成光誘起電流の時間変化に与える影響
62佐野双美、林 智恵、小山貴裕、平子 晃、藤井克司、大川和宏
2010秋、応用物理学会（第71回応用物理学会学術講演会）15p-B-9
微細化対極を用いた窒化物光触媒による水素生成
61藤井克司、加藤 崇、佐藤啓一、小池佳代、山田高広、山根久典、八百隆文
2010春、応用物理学会（第57回応用物理関係連合講演会）19p-TB-2
GaNの光電気化学特性に結晶成長方法が与える影響
60李 賢宰、Chinkyo Kim、張 志豪、藤井克司、後藤武生、八百隆文
2010春、応用物理学会（第57回応用物理関係連合講演会）18a-TC-4
Polytypismを用いたGaNの結晶成長方向制御
59八百隆文、藤井克司 （依頼講演）
2009秋、応用物理学会（第70回応用物理学会学術講演会）10p-ZD-4
一般照明用高輝度高効率LED
58藤井克司、伊藤 隆、田路和幸 （シンポジウム企画）
2009秋、応用物理学会（第70回応用物理学会学術講演会）10p-ZD-1
イントロダクトリー：太陽光発電利用による再生可能エネルギーサイクル
57河 俊碩、李 孝鐘、藤井克司、佐藤啓一、小池佳代、八百隆文
2009秋、応用物理学会（第70回応用物理学会学術講演会）10a-E-4
表面に金属窒化物（ScN, TiN, ZrN）を形成したn型GaNの光電気化学反応
56李 賢宰、河 俊碩、朴 珍燮、張 志豪、藤井克司、後藤武生、八百隆文
2009春、応用物理学会（第56回応用物理関係連合講演会）31p-ZJ-14
蒸発性バッファー層(EBL)による Semi-polar GaNの自然剥離
55藤井克司、佐藤啓一、中山仁志、加藤 崇、八百隆文
2009春、応用物理学会（第56回応用物理関係連合講演会）31a-ZJ-29
表面にPt, Tiを蒸着したn型GaNの光電気化学反応
54佐藤啓一、藤井克司、小池佳代、八百隆文
2009春、応用物理学会（第56回応用物理関係連合講演会）31a-ZJ-28
GaNを用いた光電気化学反応の時間変化に対する光強度と印加電圧の影響
53藤井克司 （依頼講演）
2009春、応用物理学会（第56回応用物理関係連合講演会）30p-G-5
半導体・光触媒による人工光合成（水分解水素生成）
52佐藤啓一、藤井克司、小池佳代、後藤武生、八百隆文
2008秋、応用物理学会（第69回応用物理学会学術講演会）3a-CG-11
n型GaNを用いた光電気化学反応における光誘起電流の時間依存性
51藤井克司、佐藤啓一、大川和宏、八百隆文
2008秋、応用物理学会（第69回応用物理学会学術講演会）3a-CG-10
表面空乏層内にp-n界面を持つGaNの光電気化学反応解析
50藤井克司、大川和宏、八百隆文 （依頼講演）
電子情報通信学会研究会
（材料デバイスサマーミーティング「インジウムナイトライドの現状と将来」）
2008.06.27
窒化物半導体を用いた光と水からの水素生成
49加藤 崇、佐藤啓一、任 寅鎬、藤井克司、八百隆文
2008春、応用物理学会（第55回応用物理学関係連合講演会）30p-A-3
Si基板上GaNナノ結晶の光電気化学反応への応用
48河 俊碩、李 錫雨、李 賢宰、李 孝鐘、李 常賢、加藤 崇、藤井克司、曺 明煥、八百隆文
2008春、応用物理学会（第55回応用物理学関係連合講演会）30a-B-3
ケミカル・リフトオフ・プロセスを用いた縦型発光ダイオードの作製
47佐藤啓一、加藤 崇、藤井克司、八百隆文
2008春、応用物理学会（第55回応用物理学関係連合講演会）29a-A-1
光電気化学反応におけるGaNのGa、N面の影響
46小泉晴比古、大野 裕、太子敏則、藤井克司、後藤裕輝、八百隆文、米永一郎
2008春、応用物理学会（第55回応用物理学関係連合講演会）28p-ZJ-2
微小硬度試験法により導入されたZnO単結晶の転位の運動および光学特性
45藤井克司 （依頼講演）
日本金属学会、2008年春季大会R8
窒化物半導体単結晶及びナノ結晶の光電気化学反応による水還元水素発生への応用
44佐藤啓一、加藤 崇、藤井克司、曺明煥、八百隆文
2007、応用物理学会東北支部（第62回東北支部学術講演会）7p-A-1
GaNを用いた光電気化学反応における 表面劣化のエタノールによる保護効果
43加藤 崇、嶺岸 耕、藤井克司、山田高広、山根久典、八百隆文
2007秋、応用物理学会（第68回応用物理学会学術講演会）8a-ZQ-10
Naフラックス法成長GaN結晶の光電気化学特性評価
42佐藤啓一、加藤 崇、藤井克司、曺明煥、八百隆文
2007秋、応用物理学会（第68回応用物理学会学術講演会）8a-ZQ-9
GaNの光電気化学反応におけるpH依存性とエタノール添加効果
41伊藤 隆、藤井克司、八百隆文 （シンポジウム企画）
2007秋、応用物理学会（第68回応用物理学会学術講演会）5p-M-9
水素発生のための光電気化学反応のその場観察
40藤井克司、伊藤 隆、大川和宏 （シンポジウム企画）
2007秋、応用物理学会（第68回応用物理学会学術講演会）5p-M-1
イントロダクトリー：光と半導体による新しいエネルギー生成と環境浄化
39大野 裕、小泉晴比古、太子敏則、藤井克司、後藤裕輝、八百隆文、米永一郎
2007秋、応用物理学会（第68回応用物理学会学術講演会）5a-ZS-5
フレッシュな転位を導入したZnO単結晶の力学特性および光学特性
38藤井克司、後藤武生、星野成大、鏡谷勇二、Dirk Ehrentraut、八百隆文、福田承生
2007秋、応用物理学会（第68回応用物理学会学術講演会）4p-ZR-5
安熱合成法により作成したGaNのフォトルミネッセンス評価（２）
37小林元気、森 貴洋、金正鎮、小林啓介、藤井克司、加藤崇、花田貴、牧野久雄、八百隆文、竹田幸治、吉川英樹
2007春、応用物理学会（第54回応用物理学関係連合講演会）28p-ZT-5
GaMnNAsのMBE成長と磁気特性に対するアニール効果
36岩城安浩、小野雅人、山口一樹、草部一秀、藤井克司、大川和宏
2007春、応用物理学会（第54回応用物理学関係連合講演会）29a-ZL-7
窒化物光触媒におけるn-n+-GaN構造最適化
35加藤 崇、中山仁志、任寅鎬、藤井克司、八百隆文
2007春、応用物理学会（第54回応用物理学関係連合講演会）29a-ZL-5
GaNナノドットの光電気化学特性評価
34藤元岳洋、藤井克司、嶺岸 耕、後藤裕輝、後藤武生、八百隆文
2007春、応用物理学会（第54回応用物理学関係連合講演会）29a-ZL-3
GaNの表面酸化と表面処理
33藤井克司、藤元岳洋、後藤武生、鏡谷勇二、吉川彰、八百隆文、福田承生
2007春、応用物理学会（第54回応用物理学関係連合講演会）27p-ZM-17
安熱合成法により作成したGaNのフォトルミネッセンス評価
32中山仁志、加藤崇、藤井克司、曺明煥、八百隆文
2006、応用物理学会東北支部（第61回東北支部学術講演会）7a-B-9
n 型GaN を用いた光電気化学反応におけるCH3OH 混合の効果
31藤井克司、岩城安浩、Troy Baker、Mike Iza、Hitoshi Sato、John Kaeding、八百隆文、Steven DenBaars、中村修二、大川和宏
2006秋、応用物理学会（第65回応用物理学会学術講演会）31a-E-12
n-GaN光電気化学的性質の面方位依存性
30岩城安浩、小野雅人、山口一樹、工藤朋弥、藤井克司、大川和宏
2006秋、応用物理学会（第65回応用物理学会学術講演会）31a-E-10
n-n+構造窒化物光触媒の光電気化学特性
29岩城安浩、小野雅人、山口一樹、藤井克司、大川和宏
2006秋、応用物理学会（第65回応用物理学会学術講演会）31a-E-9
p-n接合窒化物光触媒の光電気化学特性(II) p層厚み依存性
28小野雅人、岩城安浩、山口一樹、伊藤高志、藤井克司、大川和宏
2006秋、応用物理学会（第65回応用物理学会学術講演会）31a-E-8
p-n接合窒化物光触媒の光電気化学特性（I） 水素発生効率の向上
27伊藤高志、小野雅人、岩城安浩、三上崇嘉、藤井克司、大川和宏
2006春、電気化学会（第73回大会） 3I23
GaNの光電気化学特性のpH依存性
26藤井克司、小野雅人、伊藤高志、岩城安浩、平子晃、大川和宏
2006春、電気化学会（第73回大会） 3I22
AlxGa1-xNのバンド端電位と光電気化学特性
25小野雅人、伊藤高志、岩城安浩、平子晃、藤井克司、大川和宏
2006春、応用物理学会（第53回応用物理学関係連合講演会）25a-ZE-2
n型GaNを用いた光電気化学反応によるゼロバイアスでの水素発生
24藤井克司、大川和宏 （依頼講演）
2006春、応用物理学会（第53回応用物理学関係連合講演会）24p-C-7
窒化物光触媒による水からの水素発生
23藤井克司、小野雅人、伊藤高志、岩城安浩、大川和宏
2005.10.13-15電子情報通信学会 レーザ・量子エレクトロニクス(LQE)
/電子デバイス(ED) /電子部品・材料(CPM)合同研究会 14-11
窒化物半導体を用いた光電気化学反応による水素発生
22藤井克司、草部一秀、大川和宏
2005秋、応用物理学会（第65回応用物理学会学術講演会）11a-X-1
InxGa1-xNによる光触媒反応を用いた水素発生
21小野雅人、伊藤高志、岩城安浩、三上崇嘉、藤井克司、大川和宏
2005秋、電気化学会（2005年電気化学秋季大会） 1F32
GaNの光電気化学反応におけるキャリヤ濃度の影響
20伊藤高志、小野雅人、岩城安浩、三上崇嘉、藤井克司、大川和宏
2005秋、電気化学会（2005年電気化学秋季大会） 1F31
GaNの光照射による光電気化学特性の変化
19藤井克司、草部一秀、大川和宏
2005秋、電気化学会（2005年電気化学秋季大会） 1F30
Ga1-xInxNの電気化学特性
18藤井克司、大川和宏
2005.05.26-27電子情報通信学会 電子デバイス(ED)
/シリコン材料・デバイス(SDM)/電子部品・材料(CPM)合同研究会27-13
GaNを用いた水の光電気分解デバイス
17藤井克司、草部一秀、大川和宏
2005春、電気化学会（第72回大会） 1C08
n-GaNのエッチングと水の光増感電気分解
16藤井克司、草部一秀、大川和宏
2005春、応用物理学会（第52回応用物理学関係連合講演会）1-a-YH-6
p-GaNの光電気化学特性
15藤井克司、草部一秀、柄沢武、大川和宏
2005春、応用物理学会（第52回応用物理学関係連合講演会） 30-a-L-6
n-GaNによる水の光増感電気分解
（以下、本人筆頭分のみ）
14藤井克司、望月多恵、徳満洋司
2002春、応用物理学会（第49回応用物理学関係連合講演会）
MOCVD AlGaAs結晶成長速度の面方位依存性へのHCl添加の影響
13藤井克司、望月多恵、徳満洋司
2001秋、応用物理学会（第62回応用物理学会学術講演会）
MOCVD AlxGa1-xAs結晶成長速度の面方位依存性
12藤井克司、川村一茂、後藤秀樹
2000春、応用物理学会（第47回応用物理学関係連合講演会）
MOVPE undoped AlGaAs成長時の不純物混入
11藤井克司、川村一茂、後藤秀樹
1999秋、応用物理学会（第60回応用物理学会学術講演会）
MOVPE Zn-doped AlGaAs成長におけるDEZｎ導入の成長に及ぼす影響
10藤井克司、川村一茂、後藤秀樹
1999春、応用物理学会（第46回応用物理学関係連合講演会）
MOVPE Zn-doped AlGaAsキャリア濃度の成長条件依存性
9藤井克司、佐藤誠、川村一茂、後藤秀樹
1998秋、応用物理学会（第59回応用物理学会学術講演会）
MOVPE undoped AlGaAs成長におけるCarbon混入の成長条件依存性
8藤井克司、下山謙司、後藤秀樹
1993秋、応用物理学会（第54回応用物理学会学術講演会）
AlGaAs, GaAsのMOVPEリアクター内HClガスエッチング（II)
7藤井克司、下山謙司、後藤秀樹
1992秋、応用物理学会（第53回応用物理学会学術講演会）
AlGaAs, GaAsのMOVPEリアクター内HClガスエッチング
6藤井克司、岡田安正、折戸文夫、亀村達男
1991秋、応用物理学会（第52回応用物理学会学術講演会）
Gradient Freeze法により成長したSi doped GaAsの格子定数(IV)
5藤井克司、岡田安正、折戸文夫、藁科和路
1990秋、応用物理学会（第51回応用物理学会学術講演会）
Gradient Freeze法により成長したSi doped GaAsの格子定数(III)
4藤井克司、岡田安正、八百隆文、折戸文夫、川西枝里奈、石田幹敏
1990春、応用物理学会（第37回応用物理学関係連合講演会）
Gradient Freeze法により成長したSi doped GaAsの格子定数(II)
3藤井克司、岡田安正、八百隆文、折戸文夫、石田幹敏
1989秋、応用物理学会（第50回応用物理学会学術講演会）
LEC Si doped GaAs中の不純物Bが格子定数に及ぼす影響
2藤井克司、岡田安正、八百隆文、折戸文夫、石田幹敏
1989春、応用物理学会（第36回応用物理学関係連合講演会）
Gradient Freeze法により成長したSi doped GaAsの格子定数
１藤井克司、西原英一郎、藤田尚徳、岡野毅
1986春、応用物理学会（第34回応用物理学関係連合講演会）
窒素添加によるGF法GaAsのSi汚染の抑制
